活动简介

The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of leading-edge research and development results in the area of process and device simulation. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano electronic structures.

The 21st SISPAD conference will be held on September 6-8, 2016 in Nuremberg, Germany.

征稿信息

重要日期

2016-04-15
摘要截稿日期
2016-06-10
摘要录用日期
2016-07-05
初稿截稿日期

征稿范围

  • Process simulation and modeling

  • Equipment simulation

  • Material modeling

  • Electronic transport in semiconductor materials and devices

  • Device simulation

  • Interconnect modeling and algorithms

  • Models of VLSI device scaling limits

  • Compact modeling for circuit simulation

  • Integration of process, device and circuit simulation

  • Simulation of variability

  • Advanced numerical methods and algorithms

  • Fundamental aspects of device modeling and simulation

  • Benchmarking, calibration and verification of simulators

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重要日期

  • 会议日期

    09月06日

    2016

    至

    09月08日

    2016

  • 04月15日 2016

    摘要截稿日期

  • 06月10日 2016

    摘要录用通知日期

  • 07月05日 2016

    初稿截稿日期

  • 09月08日 2016

    注册截止日期

主办单位
IEEE
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