活动简介

The 27th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), sponsored by the IEEE Electron Devices Society and technically co-sponsored by the IEEE Power Electronics Society, will be held at Kowloon Shangri-La, Hong Kong, May 10– 14, 2015. ISPSD is the premier forum for technical discussion in all areas of power semiconductor devices and power integrated circuits. Topics of interest include: Device Physics, Device Design, High Frequency Devices, High Power Devices, Smart Power Devices, RF Power Devices, Safe-Operating Area, Reliability, and ESD; Process Integration, Doping Technology, Lifetime Control, Passivation, and Crystal Growth; Device Modeling and Circuit Simulation, Layout, and Verification Tools; Si, GaAs, SiC, GaN, and Diamond Materials; Isolation Techniques, SOI, Power IC Design, Device Technology, Energy Capability and SOA, Reliability, Power SoC, and Monolithic vs Hybrid Integration; Novel Packaging Concepts, Power SiP, Stress and Thermal Analysis, and Thermal Management; Hybrid Vehicles, Computer and Telecom Power, Motor Drives, and Utility Applications. With the Society’s awareness in renewable energy and energy efficiency, power semiconductor devices and power ICs have become a focal point as a key enabling device technology to help solve the world’s energy challenge. ISPSD 2015 will have an expected attendance of 400–500 researchers from industries, universities, and research institutions all over the world. Traditionally more than 70% of ISPSD attendees are engineers and technical managers from the power semiconductor industry. More recently, representatives from CMOS foundries and power electronics design firms are also drawn to the conference. ISPSD 2015 will commence with a popular one-day tutorial program on topics such as WBG devices in harsh environment, power ICs for use in automotive applications, high temperature packaging technologies, impact of power grid and connection of renewable energy sources, and advances in power conversion for mobile computing. The conference will feature several plenary talks given by world renowned experts and a collection of high quality technical presentations. A poster session will also be organized to offer an even closer interaction among the attendees. Several social functions have been planned to make the experience more unique and enjoyable.

征稿信息

征稿范围

Topics of interest include but are not limited to: Devices: Device Physics, Device Design, High Frequency Devices, High Power Devices, Smart Power Devices, RF Power Devices, Safe-Operating Area, Reliability, ESD Processes: Process Integration, Doping Technology, Lifetime Control, Passivation, Crystal Growth Modeling/Simulation: Device and Circuit Simulation, Layout, Verification Tools Materials: Si, GaAs, SiC, GaN, Diamond Power ICs: Isolation Techniques, SOI, Circuit Design, Device Technology, Energy Capability and SOA, Reliability, ESD, Power SoC, Monolithic vs Hybrid Packaging: Novel Packaging Concepts, Power SiP, Stress and Thermal Analysis, Thermal Management Applications: Hybrid Vehicles, Computer and Telecom Power, Motor Drives, Utility
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重要日期
  • 会议日期

    05月10日

    2015

    05月14日

    2015

  • 05月14日 2015

    注册截止日期

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