摘要详情

ID / 提交时间

278 / 2021-11-08 16:30:15

标题

Investigation and Comparison of SiC Freewheeling Diode for Switching Characteristics and Losses

关键字

SiC freewheeling diode; switching loss; switching characteristics

主题及专题

Power electronics technology and application > Power converter topologies and design

状态

终稿

作者

Ziyan Tang / Huazhong University of Science and Technology

Yue Xie / Huazhong University of Science and Technology

Jiajia Guan / Huazhong University of Science and Technology

Cai Chen / Huazhong University of Science and Technology

Yong Kang / Huazhong University of Science and Technology;School of Electrical and Electronic Engineering

摘要

The traditional half-bridge circuit needs the inverse parallel diode for freewheeling. In recent years, some SiC applications have canceled the inverse parallel diode. To compare the advantages and disadvantages of canceling inverse parallel diode, this paper studies the influence of inverse parallel diode from the perspective of switching loss. In this paper, SBD, MOSFET, and MOSFET+SBD are used as freewheeling diodes to compare the circuit’s switching characteristics and switching loss. The three circuits were tested by simulation and building a double-pulse test prototype. The method of calculating the switching loss based on the drain current and the channel current is adopted respectively to evaluate the switching loss of the three better. The results show that the dynamic characteristics of the circuit become worse when MOSFET+SBD is used, in which total loss is larger than that of SBD and MOSFET, while turn-off loss is smaller.

重要日期

会议日期

07月11日

2023

至

08月18日

2023
11月10日 2021

初稿截稿日期
12月10日 2021

注册截止日期
12月11日 2021

报告提交截止日期

主办单位

IEEE IAS

承办单位

IEEE IAS Student Chapter of Southwest Jiaotong University (SWJTU)
IEEE IAS Student Chapter of Huazhong University of Science and Technology (HUST)
IEEE PELS (Power Electronics Society) Student Chapter of HUST